Pulsed UCN production using a Doppler shifter at J-PARC

We have constructed a Doppler-shifter-type pulsed ultra-cold neutron (UCN) source at the Materials and Life Science Experiment Facility (MLF) of the Japan Proton Accelerator Research Complex (J-PARC). Very-cold neutrons (VCNs) with 136-$\mathrm{m/s}$ velocity in a neutron beam supplied by a pulsed neutron source are decelerated by reflection on a m=10 wide-band multilayer mirror, yielding pulsed UCN. The mirror is fixed to the tip of a 2,000-rpm rotating arm moving with 68-$\mathrm{m/s}$ velocity in the same direction as the VCN. The repetition frequency of the pulsed UCN is $8.33~\mathrm{Hz}$ and the time width of the pulse at production is $4.4~\mathrm{ms}$. In order to increase the UCN flux, a supermirror guide, wide-band monochromatic mirrors, focus guides, and a UCN extraction guide have been newly installed or improved. The $1~\mathrm{MW}$-equivalent count rate of the output neutrons with longitudinal wavelengths longer than $58~\mathrm{nm}$ is $1.6 \times 10^{2}~\mathrm{cps}$, while that of the true UCNs is $80~\mathrm{cps}$. The spatial density at production is $1.4~\mathrm{UCN/cm^{3}}$. This new UCN source enables us to research and develop apparatuses necessary for the investigation of the neutron electric dipole moment (nEDM).Comment: 32 pages, 15 fugures. A grammatical error was fixe

Fabrication of SrGe2 thin films on Ge (100), (110), and (111) substrates

Semiconductor strontium digermanide (SrGe2) has a large absorption coefficient in the near-infrared light region and is expected to be useful for multijunction solar cells. This study firstly demonstrates the formation of SrGe2 thin films via a reactive deposition epitaxy on Ge substrates. The growth morphology of SrGe2 dramatically changed depending on the growth temperature (300−700 °C) and the crystal orientation of the Ge substrate. We succeeded in obtaining single-oriented SrGe2 using a Ge (110) substrate at 500 °C. Development on Si or glass substrates will lead to the application of SrGe2 to high-efficiency thin-film solar cells

The application of a vacuum ultraviolet Fourier transform spectrometer and synchrotron radiation source to measurements of: IV. The β(6,0) and γ(3,0) bands of NO

The β(6,0) and the γ(3,0) bands of NO near 198 nm were analyzed using the VUV FT spectrometer with synchrotron radiation for the background source. Accurate line positions and line strengths of the rotational lines were retrieved from the FT spectra. The rotational term values of the B 2∏ r (v=6) and A 2Σ + (v=3) levels were evaluated and fed to a least squares fitting program to obtain accurate molecular constants of these levels.published_or_final_versio

Application of a VUV fourier transform spectrometer and synchrotron radiation source to measurements of. VI. The ε(0,0) band of NO

The analysis of the ε(0,0) band around 187.6 nm was reported using the VUV FTS with synchrotron radiation for the background source. Due to the capability of the combintion of instruments, These were the first high-resolution quantitative measurements of line positions and intensities of the rotational lines of the ε(0,0) band. The determination of the band oscillator strengths of the band was performed using line-by-line measurements, because the resolution of the present experiment was comparable to the Doppler widths.published_or_final_versio

The application of a VUV Fourier transform spectrometer and synchrotron radiation source to measurements of: II. The δ(1,0) band of NO

Line-by-line photoabsorption cross-sections of the NO δ(1,0) band were measured with the VUV Fourier transform spectrometer from Imperial College, London, using synchrotron radiation at Photon Factory, KEK, Japan, as a continuum light source. The analysis of the NO δ(1,0) band provides accurate rotational line positions and term values as well as the photoabsorption cross-sections. The molecular constants of the C(1)2 II level are found to be T0 = 54 690.155±0.03 cm–1, Bv = 1.944 06±0.000 62 cm–1, Dv = (5.91±0.42)×10–5 cm–1, AD = –0.0187±0.0050 cm–1, p = –0.0189±0.0037 cm–1, and q = –0.015 21±0.000 20 cm–1. The sum of the line strengths for all rotational transitions of the NO δ(1,0) band is determined as 4.80×10–15 cm2 cm–1, corresponding to a band oscillator strength of 0.0054±0.0003.published_or_final_versio

Polycrystalline thin-film transistors fabricated on high-mobility solid-phase-crystallized Ge on glass

Low-temperature formation of Ge thin-film transistors (TFTs) on insulators has been widely investigated to improve the performance of Si large-scale integrated circuits and mobile terminals. Here, we studied the relationship between the electrical properties of polycrystalline Ge and its TFT performance using high-mobility Ge formed on glass using our recently developed solid-phase crystallization technique. The field-effect mobility μFE and on/off currents of the accumulation-mode TFTs directly reflected the Hall hole mobility μHall, hole concentration, and film thickness of Ge. By thinning the 100-nm thick Ge layer with a large grain size (3.7 μm), we achieved a high μHall (190 cm2/Vs) in a 55-nm thick film that was almost thin enough to fully deplete the channel. The TFT using this Ge layer exhibited both high μFE (170 cm2/Vs) and on/off current ratios (∼102). This is the highest μFE among low-temperature (<500 °C) polycrystalline Ge TFTs without minimizing the channel region (<1 μm)

The application of a VUV Fourier transform spectrometer and synchrotron radiation source to measurements of: I. the β(9,0) band of NO

State-of-the-art models of the vacuum ultraviolet (VUV) absorbing properties of the atmosphere call for absorption cross sections with detail on the scale of the Doppler widths. As a consequence, spectroscopic data at resolving powers of the order of 10 6 are needed. To meet these requirements in the vacuum ultraviolet region, we have used the VUV Fourier transform spectrometer from Imperial College, London, at the synchrotron radiation facility at Photon Factory, KEK, Japan, to measure photoabsorption cross sections of NO from 195 to 160 nm, and of O 2 from 185 to 175 nm. The analysis of the β(9,0) band (B 2Π r-X 2Π r) of NO provides accurate rotational line positions and term values. Molecular constants of the B(9) 2Π level are T 0=54205.097±0.012cm -1, A=45.320±0.021cm -1, B υ=1.01672±0.00016cm -1, D υ=(10.61±0.32)×10 -6cm -1, and A D=0.00122±0.00011cm -1. The rotational line strengths and the branching ratios are also presented. The band oscillator strength is obtained as f=2.65×10 -4. © 1998 American Institute of Physics.published_or_final_versio

Quantum oscillations in a centrosymmetric skyrmion-hosting magnet GdRu2Si2

We have performed magnetic torque and resistivity measurements on a centrosymmetric skyrmion-host GdRu2Si2, in which the dominant magnetic interaction leading to skyrmion formation is under debate. We observe both the de Haas-van Alphen and Shubnikov-de Haas oscillations in the forced ferromagnetic phase. The angular dependence of the quantum oscillation frequencies can be reproduced by the ab-initio calculation. The de Haas-van Alphen oscillation is also observed in the double-Q phase with a different frequency to that in the forced ferromagnetic phase, indicating a Fermi surface reconstruction due to the coupling between localized spins and conduction electrons. Based on these experimental findings, the magnetic interactions in this system are discussed.Comment: 11 pages, 8 figure

A diffuse scattering model of ultracold neutrons on wavy surfaces

Metal tubes plated with nickel-phosphorus are used in many fundamental physics experiments using ultracold neutrons (UCN) because of their ease of fabrication. These tubes are usually polished to a average roughness of 25-150 nm. However, there is no scattering model that accurately describes UCN scattering on such a rough guide surface with a mean-square roughness larger than 5 nm. We therefore developed a scattering model for UCN in which scattering from random surface waviness with a size larger than the UCN wavelength is described by a microfacet Bidirectional Reflectance Distribution Function model (mf-BRDF model), and scattering from smaller structures by the Lambert's cosine law (Lambert model). For the surface waviness, we used the statistical distribution of surface slope measured by an atomic force microscope on a sample piece of guide tube as input of the model. This model was used to describe UCN transmission experiments conducted at the pulsed UCN source at J-PARC. In these experiments, a UCN beam collimated to a divergence angle smaller than $\pm 6^{\circ}$ was directed into a guide tube with a mean-square roughness of 6.4 nm to 17 nm at an oblique angle, and the UCN transport performance and its time-of-flight distribution were measured while changing the angle of incidence. The mf-BRDF model combined with the Lambert model with scattering probability $p_{L} = 0.039\pm0.003$ reproduced the experimental results well. We have thus established a procedure to evaluate the characteristics of UCN guide tubes with a surface roughness of approximately 10 nm.Comment: 15 pages, 11 figure